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Drift of Arsenic in SiO2 in a Lamp Furnace With a Built-In Temperature Gradient

Published online by Cambridge University Press:  28 February 2011

G. K. Celler ,
L. E. Trimble ,
K. W. West ,
L. Pfeiffer  and
T. T. Sheng
G. K. Celler
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. E. Trimble
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. W. West
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. Pfeiffer
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
T. T. Sheng
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

We have found that arsenic implanted into SiO2 segregates at high temperatures in an oxygen-free ambient into spherical, As-rich inclusions of 50 to 500A in diameter. The phase separation prevents diffusion of arsenic, even at temperatures as high as 1400 °C. However, the As-rich inclusions or droplets can be easily moved in a temperature gradient. They migrate towards the heat source at a rate of 2300A /hour in a gradient of 0.14 °C/μm, at 1405 °C, permitting their efficient removal from the oxide and into silicon. We propose a model to explain the dependence of droplet velocity on their size.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 53
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

[1] Wong, J. and Ghezzo, M., J. Electrochem. Soc. 119, 1413 (1972).Google Scholar
[2] Wada, Y. and Antoniadis, D. A., J. Electrochem Soc. 128 1317 (1981).Google Scholar
[3] Singh, R., Maier, M., Krautle, H., Young, D. R., and Balk, P., J. Electrochem. Soc. 131 2645 (1984).Google Scholar
[4] van Ommen, A. H., J. Appl: Phys. 56 2708 (1984).Google Scholar
[5] Celler, G. K., Trimble, L. E., West, K. W., Pfeiffer, L., and Sheng, T. T., Appl. Phys. Lett. 50 664 (1987).Google Scholar
[6] Celler, G. K., CRC Critical Reviews in Solid State and Materials Sciences, 12 193 (1985).Google Scholar
[7] Celler, G. K., Hemment, P. L. F., West, K. W., and Gibson, J. M., Appl. Phys. Lett. 48 532 (1986).Google Scholar
[8] Cline, H. E. and Anthony, T. R., J. Appl. Phys. 48 2196 (1977), and references therein.Google Scholar
[9] Lewerenz, H. J. and Wetzel, H., J. Electrochem. Soc. 130 1228 (1983).Google Scholar
[10] Chen, D. C., Szeto, R. T., and Fu, H.-S., IEDM-1983 Techn. Digest, p.43.Google Scholar
[1l] Goodhew, P. J., Radiat. Eff. 78 381 (1983).Google Scholar
[12] Shewmon, P. G., Trans. Metal. Soc. AIME 230 1134 (1964).Google Scholar