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Dopant Incorporation During Rapid Solidification

Published online by Cambridge University Press:  15 February 2011

C. W. White ,
D. M. Zehner ,
J. Narayan ,
O. W. Holland ,
B. R. Appleton  and
S. R. Wilson
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
D. M. Zehner
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
O. W. Holland
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
S. R. Wilson
Affiliation:
Motorola Inc., Phoenix, AZ
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Abstract

Incorporation of Group III, IV, V dopants in silicon occurs as a result of solute trapping during laser annealing. Distribution coefficients and substitutional solubilities are far greater than equilibrium values, and can be functions of growth velocity and crystal orientation. Mechanisms limiting dopant incorporation at high concentrations are identified and discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 287
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract W-7405-eng-26 with Union Carbide Corporation.

References

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