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Dopant Enhanced Grain Growth During Crystallization of Amorphous Silicon Using Rapid Thermal Anealing

Published online by Cambridge University Press:  21 February 2011

R. Kakkad ,
S. J. Fonash  and
P. R. Howell
R. Kakkad
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
S. J. Fonash
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
P. R. Howell
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802
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Abstract

PECVD a-Si deposited at 250ºC on 7059 glass was used as precursor material to produce low resistivity large grain doped poly Si. The films doped in the range of 1020−1021 cm-3 with P during growth or by ion implantation wereannealed at 700ºC for times 2 to 5 minutes using RTA. A dopant enhanced grain growth was observed with grain sizes of the order of 3 μm for films of only 2000Å thickness. Resistivity as low as 6x10-4 Ω-cm and mobility as highas 34 cm2 /V-sec. were obtained using this low thermal budget process.These values are comparable to those obtained in the literature using significantly higher annealing temperatures.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 115
Copyright
Copyright © Materials Research Society 1990

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