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Dispersive Hydrogen Motion and Creation of Light-Induced Defects in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

W. B. Jackson
W. B. Jackson*
Affiliation:
Xerox Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
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Abstract

This paper investigates the application of the dispersive hydrogen diffusion defect kinetic equation for the generation of light-induced defects. Self-limited monomolecular carrier defect generation by dispersive motion can explain the observed t 1/3 and the G 0.6 dependence where t is the illumination time and G is the illumination intensity as well as the equilibrium defect density as a function of temperature. However, the temperature dependence of the creation rate and compatibility with current degradation experiments remain unresolved problems.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 571
Copyright
Copyright © Materials Research Society 1989

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References

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