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Diffusion of Dopants in (111) Silicon During High Temperature Heat Treatment in Nitrogen

Published online by Cambridge University Press:  21 February 2011

T. Kook  and
R. J. Jaccodine
T. Kook
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, PA 18015
R. J. Jaccodine
Affiliation:
Sherman Fairchild Center for Solid State Studies, Lehigh University, Bethlehem, PA 18015
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Abstract

The diffusion of various dopants( B, P, As, and Sb) in (111) silicon during high temperature( 1100°C ) heat treatment in nitrogen depends on the capping layers, i.e., SiO2, Si3 N4, and SiO2 + Si3 N4, layers. The junction motion of all dopants were retar ed in the bare silicon compared with that in the SiO2 + Si3 N4 capped silicon. The apparently retarded junction motion of As and sb diffused specimens in the bare silicon is due to the severe out-diffusion loss of dopant atoms and As and Sb diffusion are in fact enhanced during thermal nitridation of silicon in N2.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984 , 83
Copyright
Copyright © Materials Research Society 1985

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References

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