Hostname: page-component-84c44f86f4-d74w9 Total loading time: 0 Render date: 2025-10-14T21:55:30.031Z Has data issue: false hasContentIssue false
  • English
  • Français

Diamond Forming Discharges

Published online by Cambridge University Press:  21 February 2011

Peter K. Bachmann  and
Hans Lydtin
Peter K. Bachmann
Affiliation:
Philips Research Laboratories, P.O.Box 1980, D-5100 Aachen, West Germany
Hans Lydtin
Affiliation:
Philips Research Laboratories, P.O.Box 1980, D-5100 Aachen, West Germany
Get access

Abstract

Methods to prepare diamond thin films by means plasma chemical vapor deposition are reviewed. The various techniques available to date are compared with respect to their deposition rates, deposition area, quality and homogeneity of the material produced, and their specific advantages and drawbacks. The deposition rates of both thermally induced and plasma induced CVD methods correlate well with the gas temperature in the reaction zone supporting the hypothesis that the large quantities of diamond precursor species necessary for high deposition rates are formed in a hot spot of the deposition system.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 181
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Derjaguin, B.V. and Fedoseev, D.V., “Growth of Diamond and Graphite from the Gasphase”, Nauka, Moscow (1977).Google Scholar
[2] Spitsyn, B.V., Bouilov, L.L., and Derjaguin, B.V., J. of Crystal Growth, 52 219 (1981).Google Scholar
[3] Kamo, M., Sato, Y., Matsumoto, S., and Setaka, N., J. of Crystal Growth, 6, 642 (1983).Google Scholar
[4] Spitzyn, B.V. and Derjaguin, B.V., author's certificate (patent application), July 10 (1956); USSR Patent 339 134, May 5, (1980).Google Scholar
[5] Eversole, W., US patents 3030187 and 3030188 (1962) (filed in 1959).Google Scholar
[6] Matsumoto, S., Sato, Y., Kamo, M., and Setaka, N., Jpn. J. of Appl. Phys. 21, L183 (1982).Google Scholar
[7] Hirose, Y. and Terasaki, Y., Jpn. J. of Appl. Phys. 25, L519 (1986).Google Scholar
[8] Sawabe, A. and Inuzuka, T., Appl. Phys. Letters, 46, 2, 146 (1985).Google Scholar
[9] Hirose, Y. and Kondo, N., Extended Abstracts, 35th Spring Meeting, Jpn. Appl. Phys. Soc. March 29, 434 (1988).Google Scholar
[10] Hirose, Y., Ananuma, S., Okada, N., Komaki, K., Proceedings of the “First International Symposium on Diamond and Diamond-Like Films”, The Electrochemical Society, Pennington, NJ, Proceedings Vol.89–12, 80 (1989).Google Scholar
[11] Snail, K., Hanssen, L., Carrington, W., Oakes, D., and Butler, J., Proceedings of the First International Conference New Diamond Science and Technology, Tokyo, Oct. 24–26, 38 (1988).Google Scholar
[12] Derjaguin, B.V., Bouliov, L.L., and Spitzyn, B.V., Arch. Nauki Mater., 7, 2, 111 (1986).Google Scholar
[13] Pinneo, J.M., 1st Diamond Technology Initiative Workshop, MIT Lincoln Laboratories, Boston, MA, Feb. 2, paper 4 (1987).Google Scholar
[14] Ravi, K.V. and Landstrass, M.I.,Proceedings of the “First International Symposium on Diamond and Diamond-Like Films”, The Electrochemical Society, Pennington, NJ, Proceedings Vol.89–12, 24 (1989).Google Scholar
[15] Suzuki, K., Sawabe, A., Yasuda, H., and Inuzuka, T., Appl. Phys. Letters, 50, 12, 728 (1987).Google Scholar
[16] Singh, B., Mesker, O.R., Levine, A.W., and Arie, Y., Appl. Phys. Letters, 52,1658 (1988).Google Scholar
[17] Ohtake, N., Tokura, H., Kuriyama, Y., Mashimo, Y., and Yoshikawa, M.,Proceedings of the “First International Symposium on Diamond and Diamond-Like Films”, The Electrochemical Society, Pennington, NJ, Proceedings Vol.89–12, 93 (1989).Google Scholar
[18] Matsumoto, S., Hino, M., Moriyoshi, Y., Nagashima, T., and Tsutsmui, M., US Patent No. 4 767 608, August 30, 1988 ( filed Oct. 19, 1987).Google Scholar
[19] Kurihara, K., Sasaki, K., Kawarada, M., and Koshino, N., Appl. Phys. Lett., 52, 6, 437 (1988).Google Scholar
[20] Matsumoto, S., in Diamond and Diamond-like Materials Synthesis edited by Johnson, G.H., Badzian, A.R., and Geis, M.W., Mat. Res. Soc. Symp. Extended Abstracts, EA-15, Pittsburgh, PA,119, (1988).Google Scholar
[21] Bachmann, P. K., Lydtin, H., Wiechert, D.U., Beulens, J.J., Kroesen, G., Schram, D.C., Proceedings of the “Third International Conference on Surface Modification Technologies”, Neuchatel, Switzerland, The Minerals, Metals & Materials Society (TMS), Warrendale, PA, (1989) in press.Google Scholar
[22] Matsumoto, S., J. Mat. Sci. Lett., 4, 600 (1985).Google Scholar
[23] Meyer, D.E., Dillon, R.O., and Woolham, J.A., J.Vac. Sci.Tech. 7,3, 2325 (1989).Google Scholar
[24] Wood, P., Wydeven, T., andTsuji, O., Abstracts of the 1st Int. Conference on the New Diamond Sci. and Tech., Oct. 24–26, Tokyo, P 100, Japanese New Diamond Forum (1988).Google Scholar
[25] Matsumoto, S., Hino, M., and Kobayashi, T., Appl. Phys. Lett., 51 10,737 (1987).Google Scholar
[26] Miyake, S., Chen, W., Hoshino, A., and Arata, Y., Trans. JWRI, 17, 2, 323 (1988).Google Scholar
[27] Matsumoto, S., Proceedings of the “First International Symposium on Diamond and Diamond-Like Films”, The Electrochemical Society, Pennington, NJ, Proceedings Vol.89–12, 50 (1989); (see also ref. [3]).Google Scholar
[28] Badzian, A.R., Simonton, B., Badzian, T., Messier, R., Spear, K.E. and Roy, R., Proc. SPIE, 683, 127 (1986).Google Scholar
[29] Bachmann, P.K., Drawl, W., Knight, D., Weimer, R., and Messier, R.F., in “Diamond and Diamond-Like Materials”(edited by Badzian, A., Geis, M., and Johnson, G.), Materials Research Society, Pittsburgh, PA, Extended Abstracts Vol. EA–15, (1988) 99.Google Scholar
[30] Bachmann, P. K., Weimer, R., and Messier, R., Diamond Technology Initiative Symposium, July 12–14,1988, Crystal City, Arlington, VA.Technical Digest, Paper T 2.Google Scholar
[31] Ishibori, K. and Ohira, Y., Abstracts of the 1st Int. Conference on the New Diamond Sci. and Tech., Oct. 24–26, Tokyo, P104, Japanese New Diamond Forum (1988).Google Scholar
[32] Tung, D.M., Hsu, W.L., McCarty, K.F., Proceedings of the “First International Symposium on Diamond and Diamond-Like Films”, The Electrochemical Society, Pennington, NJ, Proceedings Vol.89–12, 500 (1989).Google Scholar
[33] Mitsuda, Y., Yoshida, T., and Akashi, K., Rev. Sci. Instrum. , 60 2, 249 (1989).Google Scholar
[34] Kawarada, H., Mar, K.S., and Hiraki, A., Jpn. J. Appl.Phys. 2 6, L1032 (1987).Google Scholar
[35] Suzuki, J., Jpn. J. Appl.Phys. 28, 2, L 281 (1989).Google Scholar
[36] Aklufi, M. and Brock, D., Proceedings of the “First International Symposium on Diamond and Diamond-Like Films”, The Electrochemical Society, Pennington, NJ, Proceedings Vol.89–12, 114 (1989).Google Scholar
[37] Bachmann, Peter K. and Messier, Russell F., Chemical & Engineering News, 67 20, May 15, 24 (1989).Google Scholar
[38] Spear, K., J. Am. Ceram. Soc., 72 (2), (1989), 171.Google Scholar
[39] Angus, J.C. and Hayman, C.C., Science, 241, (1988), 913.Google Scholar
[40] DeVries, R.C., Annu. Rev. Mater. Sci., 17, (1987) 161.Google Scholar
[41] Hara, A. and Fujimori, N., Proceedings of the “First International Symposium on Diamond and Diamond-Like Films”, The Electrochemical Society, Pennington, NJ, Proceedings Vol.89–12, 14 (1989).Google Scholar
[42] Badzian, A.R., Bachmann, P.K., Hartnett, T., Badzian, T., and Messier, R.F., in “Amorphous Hydrogenated Carbon Films”, edited by Oelhafen, P. and Koidl, P., European Materials Research Society, Vol. XVI1, Les Editions de Physique, Paris, France, 63 (1987).Google Scholar
[43] Lersmacher, B., Lydtin, H., Knippenberg, W.F., and Moore, A.W., Carbon, 5, 205 (1967).Google Scholar
[44] Vandenbulcke, L., Bou, P., and Moreau, G., Proceedings of the “First International Symposium on Diamond and Diamond-Like Films”, The Electrochemical Society, Pennington, NJ, Proceedings Vol.89–12, 594 (1989).Google Scholar
[45] Tsuda, M., Nakajima, M., and Oikawa, S., Jpn. J. Appl. Phys., 26, L527 (1987)Google Scholar
[46] Frenklach, M. and Spear, K.E., J. Mat. Res., 3, 1, 133 (1988).Google Scholar