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Determination of the Distribution of Ion Implantation Boron inSilicon

Published online by Cambridge University Press:  17 March 2011

Te-Sheng Wang ,
A.G. Cullis ,
E.J.H. Collart ,
A.J. Murrell  and
M.A. Foad
Te-Sheng Wang
Affiliation:
Dept of Electronic & Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, UK
A.G. Cullis
Affiliation:
Dept of Electronic & Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, UK
E.J.H. Collart
Affiliation:
Applied Materials, Thermal Processing and Implant Division, Foundry Lane, Horsham, West Sussex, RH13 5PY, UK
A.J. Murrell
Affiliation:
Applied Materials, Thermal Processing and Implant Division, Foundry Lane, Horsham, West Sussex, RH13 5PY, UK
M.A. Foad
Affiliation:
Applied Materials, Transistor Doping and Junction Division, 3050 Bowers Avenue, Santa Clara, CA 95054, USA
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Abstract

Boron is the most important p-type dopant in Si and it is essential that,especially for low energy implantation, both as-implanted B distributionsand those produced by annealing should be characterized in very great detailto obtain the required process control for advanced device applications.While secondary ion mass spectrometry (SIMS) is ordinarily employed for thispurpose, in the present studies implant concentration profiles have beendetermined by direct B imaging with approximately nanometer depth andlateral resolution using energy-filtered imaging in the transmissionelectron microscopy. The as-implanted B impurity profile is correlated withtheoretical expectations: differences with respect to the results of SIMSmeasurements are discussed. Changes in the B distribution and clusteringthat occur after annealing of the implanted layers are also described.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O14.3/R9.3
Copyright
Copyright © Materials Research Society 2001

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