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A Detailed Examination of Time-Resolved Pulsed Raman Temeperature Measurements of Laser Annealed Silicon

Published online by Cambridge University Press:  15 February 2011

G. E. Jellison Jr. ,
D. H. Lowndes  and
R. F. Wood
G. E. Jellison Jr.
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
D. H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
R. F. Wood
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830
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Abstract

Raman temperature measurements during pulsed laser annealing of Si by Compaan and co-workers are critically examined. It has been shown previously that the Stokes to anti-Stokes ratio depends critically upon the optical properties of silicon as a function of temperature. These dependences, coupled with the large spatial and temporal temperature gradients normally found immediately after the high reflectivity phase, result in large variations in the calculated temperature depending upon the probe laser pulse width and the pulse-to-pulse and spatial variations in the annealing pulse energy density.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 35
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

1.Laser and Electron Beam Interactions with Solids, Appleton, B. R. and Celler, G. K. eds. (North-Holland, New York 1982).Google Scholar
2. See for example, Wood, R. F. and Giles, G. E., Phys. Rev. B 23, 2923 (1981);Google Scholar
Wood, R. F., Lowndes, D. H., and Giles, G. E., Ref. 1, pp. 67–72.Google Scholar
3. See for example, Van Vechten, J. A., J. Phys. C 41, 4 (1980) and references therein.Google Scholar
4. See for example, several papers this volume.Google Scholar
5.Lo, H. W. and Compaan, A., Phys. Rev. Lett. 44, 1604 (1980);Google Scholar
Lo, H. W. and Compaan, A., Appl. Phys. Lett. 38, 179 (1981);Google Scholar
Compaan, A., Aydinli, A., Lee, M. C., and Lo, H. W., Ref. 1, pp. 43–48.Google Scholar
6.Wood, R. F., Rasolt, M., and Jellison, G. E. Jr., Ref. 1, pp. 61–66;Google Scholar
Wood, R. F., Lowndes, D. H., Jellison, G. E. Jr., and Modine, F. A., Appl. Phys. Lett. 41, 287 (1982).Google Scholar
7.Jellison, G. E. Jr., Lowndes, D. H., and Wood, R. F., manuscript in preparation.Google Scholar
8.Jellison, G. E. Jr. and Modine, F. A., J. Appl. Phys. 53, 3745 (1982);Google Scholar
Jellison, G. E. Jr. and Modine, F. A., Appl. Phys. Lett. 41, 180 (1982);Google Scholar
Jellison, G. E. Jr. and Modine, F. A., submitted to Phys. Rev. B.Google Scholar
9.Wood, R. F., manuscript in preparation.Google Scholar