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Deposition of Diamond Films by Scanning Oxy-Acetylene Flame

Published online by Cambridge University Press:  26 February 2011

Yonhua Tzeng ,
Richard Phillips ,
Chin C. Tin ,
Y. Chen ,
T. Srivinyunon  and
Calvin Cutshaw
Yonhua Tzeng
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
Richard Phillips
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
Chin C. Tin
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
Y. Chen
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
T. Srivinyunon
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
Calvin Cutshaw
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
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Abstract

Diamond films have been deposited on silicon wafers by scanning an oxyacetylene flame against water-cooled silicon substrates. High quality diamond films about 20 um thick can be achieved by scanning the flame at a speed of about 0.2 mm per minute. The as-deposited films exhibit high electrical resistivity exceeding 1014Ωcm. Current voltage measurement shows the trap-dominated current conduction characteristics similar to that for dehydrogenated diamond films deposited by methane/hydrogen plasmas.

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References

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