Hostname: page-component-54dcc4c588-64p75 Total loading time: 0 Render date: 2025-10-09T02:05:09.291Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition and Properties of Epitaxial Ferrite Thin Films

Published online by Cambridge University Press:  15 February 2011

Julia M. Phillips ,
R. B. Van Dover ,
E. M. Gyorgy  and
J. H. Marshall
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
R. B. Van Dover
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
E. M. Gyorgy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. H. Marshall
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Get access

Abstract

We have grown thin films and multilayers of several ferrite materials with the spinel structure by pulsed laser deposition of stoichiometric targets. Epitaxial films can be grown on a variety of substrates including MgO, Al2O3, MgAl2O4, Y-stabilized ZrO2 (YSZ) and SrTiO3. Films on Mg- and Al-containing substrates have a low saturation Magnetization, Ms, while films on YSZ and SrTiO3 exhibit bulk values of Ms. The anisotropy can be lowered by a post growth anneal, resulting in a film with a permeability of 28.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 589
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Suran, G. and Heurtel, A., J. Appl. Phys 43, 536 (1972).Google Scholar
2. Brook, R. J. and Kingery, W. D., J. Appl. Phys. 38, 3589 (1967).Google Scholar
3. Morineau, R. and Paulus, M., Czech. J. Phys. B 21, 563 (1971).Google Scholar
4. Fitzgerald, A. G., J. Mat. Sci. 22, 1887 (1987).CrossRefGoogle Scholar
5. Engin, R. and Fitzgerald, A. G., J. Mat. Sci 8, 169 (1973).Google Scholar
6. Hiratsuka, N., Electronics and Communications in Japan, Part 2 70, 1453 (1987).Google Scholar
7. Koinkar, V. N., Nawathey, R., Chaudhari, S. M., Kanetkar, S. M., Date, S. K., and Ogale, S. B., Proceedings ICF-5, India, p. 525 (1989).Google Scholar
8. Westwood, W. D., Eastwood, H. K., and Sadler, A. G., J. Vac. Sci. Technol. 8, 176 (1971).Google Scholar
9. Williams, C. M., Chrisey, D. B., Lubitz, P., and Grabowski, K. S., J. Appl. Phys. 73, 6312 (1993).Google Scholar
10. van Utiert, L. G., J. Chem. Phys. 24, 306 (1956).CrossRefGoogle Scholar