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Degradation Behavior of Optoelectronic Devices

Published online by Cambridge University Press:  15 February 2011

Junji Matsui
Junji Matsui*
Affiliation:
Fundamental Research Laboratories, Nippon Electric Co., Ltd., Miyazaki Yonchome, Miyamae-Ku, Kawasaki, 213, Japan
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Abstract

Various degradation modes and features of crystalline defects associated with the degradation observed both in GaA1As/GaAs and InGaAsP/InP double heterostructure light emitting sources (LED's and Lasers) are reviewed, noticing similarities and differencies between those two material systems. Non-existence of rapid degradation in the quaternary caused by DLD formation (dislocation motion) will be discussed in terms of atomic rearrangements arouna the dislocation core.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 477
Copyright
Copyright © Materials Research Society 1982

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References

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