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Defect-Free Band-Edge Photoluminescence in SiGeC Strained Layers Grown by Rapid Thermal Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

C. W. Liu ,
A. St. Amour ,
J. C. Sturm ,
Y. R. J. Lacroix  and
M. L. W. Thewalt
C. W. Liu
Affiliation:
National Chunghsing University, Dept. of Electrical Engineering, Taichung, Taiwan
A. St. Amour
Affiliation:
Princeton University, Dept. of Electrical Engineering, Princeton, NJ 08544
J. C. Sturm
Affiliation:
Princeton University, Dept. of Electrical Engineering, Princeton, NJ 08544
Y. R. J. Lacroix
Affiliation:
Simon Fraser University, Dept. of Physics, British Columbia VSA 1S6, Canada
M. L. W. Thewalt
Affiliation:
Simon Fraser University, Dept. of Physics, British Columbia VSA 1S6, Canada
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Abstract

The defect-free band-edge photoluminescence at both 30K and 77K was observed for the first time in Si/SiGeC/Si quantum wells. The SiGeC samples were prepared by rapid thermal chemical vapor deposition (RTCVD) by using methylsilane as carbon source added in a dichlorosilane and germane mixture. Deep photoluminescence around 0.8 eV, previously reported by Boucaud et al., was no longer observed under any excitation conditions. Compared to control Si/SiGe/Si quantum wells, the initial effect of adding the C is to decrease the bandgap of the host SiGe layers, despite the fact that the diamond has a large bandgap.

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References

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