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Defect Centers Formed During Wet Oxidation of Si-Ge/Si Heterostructures

Published online by Cambridge University Press:  22 February 2011

M. E. Zvanut ,
W. E. Carlos ,
S. M. Prokes  and
R. E. Stahlbush
M. E. Zvanut
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
W. E. Carlos
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
S. M. Prokes
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
R. E. Stahlbush
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
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Abstract

Germanium incorporated oxide films formed by wet oxidation of SiGe substrates have been studied using Electron Paramagnetic Resonance. SiGe layers 400 nm thick were prepared by molecular beam epitaxy and oxidized in a steam ambient at 900° C. After a 10 Mrad x-ray irradiation, an oxide defect with a zero crossing at g=1.995 is observed. Comparison of the spectrum with that obtained from Ge-doped silica suggests that the defect observed in the thin film is an oxygen vacancy related defect, a Ge E' center.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 199
Copyright
Copyright © Materials Research Society 1991

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References

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