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Deep-UV, Light-Assisted, Wet Etching of Compound Semiconductors

Published online by Cambridge University Press:  21 February 2011

D. V. Podlesnik ,
H. H. Gilgen  and
R. M. Osgood
D. V. Podlesnik
Affiliation:
Department of Electrical Engineering, Columbia University New York, NY 10027
H. H. Gilgen
Affiliation:
Department of Electrical Engineering, Columbia University New York, NY 10027
R. M. Osgood
Affiliation:
Department of Electrical Engineering, Columbia University New York, NY 10027
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Abstract

Deep-UV, laser-light-assisted, wet etching of compound semiconductors is reported. As ccmpared to results with visible light, the etching rates per unit power density in the ultraviolet are considerably faster; a factor of >30 is seen under typical conditions. A correlation between the UV absorption in different etching solutions and the light-enhanced etching rates is examined. Gratings with 100-nm resolution have been produced and high-aspect-ratio via-holes have been etched.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 161
Copyright
Copyright © Materials Research Society 1984

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References

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