Hostname: page-component-54dcc4c588-42vt5 Total loading time: 0 Render date: 2025-10-11T23:19:01.791Z Has data issue: false hasContentIssue false
  • English
  • Français

Damageless Magnetron Sputtering Deposition of SnO2:Sb Thin Films with Compensation Methods

Published online by Cambridge University Press:  15 February 2011

Sung Ho Shin ,
Kug-Hyun Song ,
Kwang Ja Park ,
Tadashi Ishida  and
Osamu Tabata
Sung Ho Shin
Affiliation:
Surface Finishing Laboratory, National Industrial Technology Institute 2 Joongang-dong, Kwacheon-city Kyeonggi-do, 427-010, Korea
Kug-Hyun Song
Affiliation:
Surface Finishing Laboratory, National Industrial Technology Institute 2 Joongang-dong, Kwacheon-city Kyeonggi-do, 427-010, Korea
Kwang Ja Park
Affiliation:
Surface Finishing Laboratory, National Industrial Technology Institute 2 Joongang-dong, Kwacheon-city Kyeonggi-do, 427-010, Korea
Tadashi Ishida
Affiliation:
Thin Film Engineering Laboratory, Material Physics Department, Osaka National Research Institute, 1-8-31 Midorigaoka, Ikeda, Osaka 563, Japan
Osamu Tabata
Affiliation:
Thin Film Laboratory, 5-210, 2-9-2, Fushiodai, Ikeda, Osaka 563, Japan
Get access

Abstract

Phenomena and solving methods for damage of Sb-doped SbO2 thin films deposited by RF magnetron sputtering have been investigated by observing in the main the positional difference of film electrical resistivity. A ring plate mask was used to disperse the energetic particles and sputtering parameters were controlled such a manner that effects by the parameters were compensated each other. By the control, positional differences in resistivity and XRD patterns of the films could be reduced to a minimum value; The films became nearly uniform ones.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Tominaga, K., Iwamura, S., Shintani, Y. and Tada, O., Jpn. J. Appl. Phys., 21, p.688 (1982)Google Scholar
2. Minakata, M., Chubachu, N. and Kikuch, Y., Jpn. J. Appl. Phys., 11, p.1852 (1972)Google Scholar
3. Ito, K. and Nakazawa, T., Jpn. J. Appl, Phys., 22, L245 (1983)Google Scholar
4. Voss, D. E. and Chen, S. A., Princeton Univ. Plasma Phys. Lab. Rep., PPPL, p.1668 (1980)Google Scholar
5. Tominaga, K. and Shintani, Y., Oyo Buturi(in Japanese), 62, p.1230 (1993)Google Scholar
6. Tominaga, K., Yuasa, T., Kume, M., and Tada, O., Jap.J. Appl. Phys., 24, p.944 (1985)Google Scholar
7. Nanto, N., Minami, T., Shooji, S. and Takata, S., J. Appl. Phys., 55, p.1092 (1984)Google Scholar
8. Nakazawa, T. and Ito, K., J. Vac., Soc. Jpn., 26, p.889 (1983)Google Scholar
9. Ishibashi, A. and Nakamura, H., Ulvac Technical Journal (in Japanese), 33, p.9 (1989)Google Scholar