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Damage Removal and Activation in Rapid-Thermally-Annealed Silicon Implanted Semi-Insulating GaAs

Published online by Cambridge University Press:  21 February 2011

J. L. Tandon ,
J. H. Madok ,
I. S. Leybovich  and
G. Bai
J. L. Tandon
Affiliation:
McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647
J. H. Madok
Affiliation:
McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647
I. S. Leybovich
Affiliation:
McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647
G. Bai
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

In the Rapid-Thermal-Annealing of Si-implanted undoped semi-insulating GaAs three regimes are broadly identified. At ˜ 600°C, ion implantation damage is largely removed, as indicated by lattice-strain measurements performed by X-ray rocking curves. Between ˜ 600 – 900°C, “extended defects”, which presumably account for the long tails in the electron concentration depth profiles, are annealed. Higher annealing temperatures in this range result in profiles with successively shorter tails. Finally, beyond ˜ 900°C, “acceptor levels” in the material are revealed, which become effective in compensating the Si activation.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 207
Copyright
Copyright © Materials Research Society 1988

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References

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