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Damage Nucleation in Si During Ion Irradiation

Published online by Cambridge University Press:  25 February 2011

O. W. Holland ,
D. Fathy  and
J. Narayan
O. W. Holland
Affiliation:
Microelectronics Center of North Carolina, P.O. Box 12889, Research Triangle Park, NC 27709
D. Fathy
Affiliation:
Microelectronics Center of North Carolina, P.O. Box 12889, Research Triangle Park, NC 27709
J. Narayan
Affiliation:
Microelectronics Center of North Carolina, P.O. Box 12889, Research Triangle Park, NC 27709
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Abstract

Damage nucleation in single crystals of silicon during ion irradiation is investigated. Experimental results and mechanisms for damage nucleation during both room and liquid nitrogen temperature irradiation with different mass ions are discussed. It is shown that the accumulation of damage during room temperature irradiation depends on the rate of implantation. These dose rate effects are found to decrease in magnitude as the mass of the ions is increased. The significance of dose rate effects and their mass dependence on nucleation mechanisms is discussed.

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References

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