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CW Laser Induced Deep Level Defects in Virgin Silicon.

Published online by Cambridge University Press:  15 February 2011

A. Chantre ,
M. Kechouane  and
D. Bois
A. Chantre
Affiliation:
Cnet/Cns – BP: 42 – 38240 Meylan-Grenoble – France.
M. Kechouane
Affiliation:
Cnet/Cns – BP: 42 – 38240 Meylan-Grenoble – France.
D. Bois
Affiliation:
Cnet/Cns – BP: 42 – 38240 Meylan-Grenoble – France.
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Abstract

Deep Level Transient Spectroscopy has been used to investigate cw laser induced defects in virgin silicon. Two main regimes have been found. In the solid phase regime, two well defined deep levels at Ec−0.19 eV and Ec−0.45 eV are observed. This point defect introduction is proposed to be involved in the degradation of ion-implanted cw laser annealed junctions. The mechanism leading to point defects generation is likely to involve trapping of in–diffused vacancies, quenched–in from the high temperature state. In the slip lines or melt regimes, additionnal deep levels are detected, which are ascribed to dislocations.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 325
Copyright
Copyright © Materials Research Society 1982

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References

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