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Cu gettering in Si cavities observed by Positron AnnihilationDoppler Broadening

Published online by Cambridge University Press:  17 March 2011

H. Schut ,
A. van Veen  and
S.W.H. Eijt
H. Schut
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL-2629 JB Delft, The Netherlands
A. van Veen
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL-2629 JB Delft, The Netherlands
S.W.H. Eijt
Affiliation:
Interfaculty Reactor Institute, Delft University of Technology, Mekelweg 15, NL-2629 JB Delft, The Netherlands
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Abstract

In this study we present the results of Positron Beam Annihilation (PBA)experiments on the gettering of copper in Cz-Si implanted with 33 keV He+ ions with doses ranging from 0.5 to 3× 1016cm−2 followed by an anneal treatment at 1100 Kunder N2 ambient. For the higher doses this yields a sub-surfacelayer containing nanometer sized cavities. Copper is introduced into thesecavities by diffusing from the backside of the wafer at 1000 K, again under N2 ambient. Mapping of the S and W Doppler broadening parameters, with the implantationdose as running parameter, shows the formation of cavities. After the Cuin-diffusion the change in the values of the characteristic S-W cluster points clearly demonstratesthe arrival of Cu at the internal surface of the cavities.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O6.5
Copyright
Copyright © Materials Research Society 2001

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References

1. Griffioen, C.C., Evans, J.H., Jong, P.C. de and Veen, A. van, Nucl. Instr. and Meth. B28, 360 (1987).Google Scholar
2. Myers, S.M., Bishop, D.M., Follsteadt, D.M., Stein, H.J. and Wampler, W.R., Mat. Res. Soc. Symp. Vol 283, 549 (1993).Google Scholar
3. Raineri, V., Battigla, A., Rimini, E., Nucl. Instr. Meth. B96, 249 (1995).Google Scholar
4. Veen, A. van, Schut, H. and Mijnarends, P.E., Chapter 6 in Positron beams and their applications, Coleman, P.G. (Ed.), (World Scientific, Singapore, 2000) p. 191–225.Google Scholar
5. Kögler, R., Peeva, A., Anwand, W., Brauer, G., Skorupa, W., Werner, P. and Gösele, U., Appl. Phys. Lett. 75, 1279 (1999).Google Scholar
6. Valkealahti, S. and Nieminen, R.M., Appl. Phys. A 35, 51 (1984).Google Scholar
7. Hakvoort, R.A., Veen, A. van, Mijnarends, P.E. and Schut, H., Proceedings SLOPOS-6, Appl. Surf. Sci. 85, 271 (1995).Google Scholar
8. Ziegler, J.F., Biersack, J.P. and Littmark, U., The stopping and Range of Ions in Solids (TRIM), (Pergamon, New York, 1985).Google Scholar
9. Veen, A. van, Schut, H., Vries, J. de, Hakvoort, R.A. and IJpma, M.R., Positron beams for solids and surfaces, AIP Conf. Proc. 218, eds. Schultz, P.J., Massoumi, G.R. and Simpson, P.J. (AIP, New York, 1990).Google Scholar
10. Dannefaer, S. and Kerr, D., J. Appl. Phys. 60, 1313 (1986).Google Scholar