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Crystallographic Texture Characterization of Inlaid Copper Interconnects

Published online by Cambridge University Press:  21 March 2011

Inka Zienert ,
Paul Besser ,
Werner Blum  and
Ehrenfried Zschech
Inka Zienert
Affiliation:
Materials Analysis Department, AMD Saxony Manufacturing Dresden, Germany
Paul Besser
Affiliation:
Technology Development Group, Advanced Micro Devices, Sunnyvale, CA, USA
Werner Blum
Affiliation:
Materials Analysis Department, AMD Saxony Manufacturing Dresden, Germany
Ehrenfried Zschech
Affiliation:
Materials Analysis Department, AMD Saxony Manufacturing Dresden, Germany
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Developing faster integrated circuits places incredible demands on the interconnect system. The smaller feature sizes lead to excessive current densities, which in turn make the interconnect lines more susceptible to electromigration (EM) failure.[1] Studies have shown that EM performance can be improved by increasing the strength of the {111} texture in conventionally- fabricated aluminum-based lines.[2-6] The strong {111} texture minimizes the presence of high- angle grain boundaries along the interconnect line, thus minimizing a fast-diffusion path for EM mass transport.[2-4,7-12]

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References

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