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Crystallization, Diffusion and Phase Separation in Sapphire Amorphised by Indium Ion Implantation

Published online by Cambridge University Press:  26 February 2011

D. X. Cao ,
D. K. Sood  and
A. P. Pogany
D. X. Cao
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne 3001, Australia.
D. K. Sood
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne 3001, Australia.
A. P. Pogany
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology, GPO Box 2476V, Melbourne 3001, Australia.
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Abstract

Indium implantation into a-axis sapphire to peak concentrations of 8–45 mol % In produces amorphous surface layers.Migration of In during isothermal annealing at 600°C shows a strong ion dose dependence. For a dose of 6×1016In/cm2, two distinct types of In migration are seen - a) rapid diffusion of In within amorphous Al2O3 and b) diffusion of In into crystalline Al2O3 underlying the amorphous layer. For doses lower than 3×1016In/cm2 , no such migration of In is seen under identical anneal conditions. However, In undergoes phase separation into crystalline In2O3 particles embedded in amorphous Al2O3 at all doses.

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References

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