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Crystal Growth Modified by Pulsed Laser Irradiation on Growing Surface in Ba-Y-Cu-O Film Preparation by Laser Ablation

Published online by Cambridge University Press:  26 February 2011

Akiharu Morimoto ,
Shigeru Mizukami ,
Tatsuo Shimizu ,
Toshiharu Mlnamikawa ,
Yasuto Yonezawa ,
Kazuhito Segawa  and
Shigeru Otsubo
Akiharu Morimoto
Affiliation:
Dept. of Electronics, Fac. of Technology, Kanazawa Univ., Kanazawa 920, Japan
Shigeru Mizukami
Affiliation:
Dept. of Electronics, Fac. of Technology, Kanazawa Univ., Kanazawa 920, Japan
Tatsuo Shimizu
Affiliation:
Dept. of Electronics, Fac. of Technology, Kanazawa Univ., Kanazawa 920, Japan
Toshiharu Mlnamikawa
Affiliation:
Dept. of Electronics, Fac. of Technology, Kanazawa Univ., Kanazawa 920, Japan
Yasuto Yonezawa
Affiliation:
Industrial Research Institute of Ishikawa, Kanazawa 920–02, Japan
Kazuhito Segawa
Affiliation:
Industrial Research Institute of Ishikawa, Kanazawa 920–02, Japan
Shigeru Otsubo
Affiliation:
Shibuya Co. Ltd., Kanazawa 920, Japan
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Abstract

Ba2YCu3Ox superconducting films were prepared by Nd:YAG laser ablation, equipped with a second (ArF excimer) laser for irradiation onto the growing film surface. The irradiation onto the film during the deposition were delayed for various delay times against the ablation of Ba2YCu3Ox target. The experiment showed that the second laser irradiation within several tens us around the ablation event induces a change of the crystal orientation. This result suggests that the crystal growth for the laser ablation is determined mainly around this time scale.

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References

REFERENCES

1. Dijkkamp, D., Venkatesan, T., Wu, X. D., Shaheen, S. A., Jisrawi, N., Min-Lee, Y. H., McLean, W. L. and Croft, M., Appl. Phys. Leti. 51, 619 (1987).Google Scholar
2. Otsubo, S., Minamikawa, T., Yonezawa, Y., Morimoto, A. and Shimizu, T., Jpn. J. Appl. Phys. 28, 2211 (1989).Google Scholar
3. Arikawa, T., Itozaki, H., Harada, K., Higaki, K., Tanaka, S., Yazu, S., Jpn. J. Appl. Phys. 29, L2199 (1990).Google Scholar
4. Fujita, J., Yoshitake, T., Kamijo, A., Satoh, T. and Igarashi, H., J. Appl. Phys. 64. 1292 (1988).Google Scholar
5. Izumi, H., Ohata, K., Sawada, T., Morishita, T. and Tanaka, S., Jpn. J. Appl. Phys. 30, 1956 (1991).Google Scholar
6. Eryu, O., Murakami, K., Masuda, Y., Shihoyama, A. and Mochizuki, T., Jpn. J. Appl. Phys. 21, L86 (1992).Google Scholar
7. Otsubo, S., Minamikawa, T., Yonezawa, Y., Morimoto, A. and Shimizu, T., Jpn. J. Appl. Phys. 29, L73 (1990).Google Scholar
8. Inam, A., Wu, X. D., Venkatesan, T., Ogel, S. B., Chang, C. C. and Dijkkamp, D., Appl. Phys. Lett. 51, 1112 (1987).Google Scholar