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Correlation of Roughness, Impurity, Infra-Red Emissivity and Sputter Conditions for Aluminium Films

Published online by Cambridge University Press:  21 February 2011

C.H. Wang ,
W.C. Shih ,
R.E. Somekh ,
J.E. Evetts  and
D. Jackson
C.H. Wang
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, U.K.
W.C. Shih
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, U.K.
R.E. Somekh
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, U.K.
J.E. Evetts
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, U.K.
D. Jackson
Affiliation:
Royal Greenwich Observatory, Madingley Road, Cambridge CB3 OEZ, U.K.
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Abstract

We report the results of a study of IR emissivity of aluminium films as a function of impurity level, film thickness and sputtering conditions. Preliminary work suggests that for a given level of film impurities and deposition conditions, the JJR emissivity can be minimized with a certain film thickness. The influence of impurity level, film thickness, and sputter pressure on IR emissivity has been correlated with the resistivity and the surface roughness (measured by atomic force microscopy). The results are discussed in the general context of the Drude theory with allowances for the observed roughness.

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