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Controlled Growth of ZnO films on Si Substrate and N-doping Behavior

Published online by Cambridge University Press:  01 February 2011

Y. F. Mei ,
Ricky K. Y. Fu ,
R. S. Wang ,
K. W. Wong ,
H. C. Ong ,
L. Ding ,
W. K. Ge ,
G. G. Siu  and
Paul K. Chu
Y. F. Mei
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
Ricky K. Y. Fu
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
R. S. Wang
Affiliation:
Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong
K. W. Wong
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
H. C. Ong
Affiliation:
Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong
L. Ding
Affiliation:
Department of Physics, Hong Kong University of Science & Technology, Hong Kong
W. K. Ge
Affiliation:
Department of Physics, Hong Kong University of Science & Technology, Hong Kong
G. G. Siu
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
Paul K. Chu
Affiliation:
Department of Physics and Materials Science, City University of Hong Kong, Hong Kong
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Abstract

ZnO films with orientations of (001), (110), and (100) were fabricated on silicon by different substrate biases at low temperature. Dynamic cathodoluminescence (CL) dependence on electron bombardment revealed unstable Zn-N bonding if N2 was used as a predecessor. CL under various accelerated voltages showed the possible energies of Zn-N. N-related photoluminescence (PL) at low temperature confirmed that nitrogen was released after annealing. These N-doping behaviors agreed to the theoretical calculation.

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