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Control of Sizes and Optical Emission of Sige Quantum Dots Prepared on Ordered Mesoporous Silica Coated Si Wafer

Published online by Cambridge University Press:  10 February 2011

Y. S. Tang ,
S. Cai ,
D. Wang ,
G. Jin ,
J. Duan ,
K. L. Wang ,
H. M. Soyez  and
B. S. Dunn
Y. S. Tang
Affiliation:
UCLA, Electrical Engineering Dept, Los Angeles, CA90095–1594, ystang@ee.ucla.edu
S. Cai
Affiliation:
UCLA, Electrical Engineering Dept, Los Angeles, CA90095–1594, ystang@ee.ucla.edu
D. Wang
Affiliation:
UCLA, Electrical Engineering Dept, Los Angeles, CA90095–1594, ystang@ee.ucla.edu
G. Jin
Affiliation:
UCLA, Electrical Engineering Dept, Los Angeles, CA90095–1594, ystang@ee.ucla.edu
J. Duan
Affiliation:
UCLA, Electrical Engineering Dept, Los Angeles, CA90095–1594, ystang@ee.ucla.edu
K. L. Wang
Affiliation:
UCLA, Electrical Engineering Dept, Los Angeles, CA90095–1594, ystang@ee.ucla.edu
H. M. Soyez
Affiliation:
UCLA, Materials Science Dept, Los Angeles, CA90095
B. S. Dunn
Affiliation:
UCLA, Materials Science Dept, Los Angeles, CA90095
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Abstract

A new way of preparing wafer sized SiGe and Ge quantum dots at extremely low cost is presented. The results show that two different controlled nanometer sizes of the quantum dots can be formed simultaneously into two layers on the same wafer with good dot size uniformity. Our initial experiments on SiGe and Ge system suggest that it is possible to squeeze the SiGe dots for much improved optical emission. The advantages of this dot preparation method are its fully compatibility with the Sitechnology, its simplicity in dot preparation and extremely low cost.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 255
Copyright
Copyright © Materials Research Society 1998

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References

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