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Control of Bonded SiH in Silicon Oxides Deposited by Remote Plasma Enhanced CVD

Published online by Cambridge University Press:  22 February 2011

D. V. Tsu ,
G. N. Parsons ,
G. Lucovsky  and
M. W. Watkins
D. V. Tsu
Affiliation:
Department of Physics, NC State University, Raleigh, NC 27695
G. N. Parsons
Affiliation:
Department of Physics, NC State University, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Department of Physics, NC State University, Raleigh, NC 27695
M. W. Watkins
Affiliation:
Department of Physics, NC State University, Raleigh, NC 27695
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Abstract

This paper describes Optical Emission Spectrocopy (OES) and Mass Spectrometry (MS) studies of the plasma region in the Remote Plasma Enhanced Chemical Vapor Deposition (PECVD) of amorphous hydrogenated silicon (a-Si:H) and silicon oxide thin films. In Remote PECVD, only the O2/He mixture is plasma excited, silane is introduced into the deposition chamber well below the plasma region. Deposition of films has been studied over a wide range of relative He and O2flows, between 100% He and 100% O2. The incorporation of SiH in the oxides derives from the same mechanism as the deposition of a-Si:H, i.e., a metastable He induced fragmentation of silane.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 73
Copyright
Copyright © Materials Research Society 1988

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