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Composition- and Temperature-Dependence of Ion Mixing in Amorphous Si/Ge Artificial Multilayers

Published online by Cambridge University Press:  25 February 2011

B. Park ,
F. Spaepen ,
J. M. Poate ,
F. Priolo  and
D. C. Jacobson
B. Park
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
F. Spaepen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
J. M. Poate
Affiliation:
AT&T Bell Laboratories, 600 Mountain Road, Murray Hill, NJ 07974
F. Priolo
Affiliation:
AT&T Bell Laboratories, 600 Mountain Road, Murray Hill, NJ 07974
D. C. Jacobson
Affiliation:
AT&T Bell Laboratories, 600 Mountain Road, Murray Hill, NJ 07974
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Abstract

Amorphous Si/Ge artificial multilayers with a repeat length of around 60A have been partially mixed with 1.5 MeV Ar+ ions at temperatures in the range 77–673K. The change in the intensity of the first X-ray diffraction peak resulting from the composition modulation is used to determine the mixing lengths. The diffusive component of the square of the mixing length, at a given dose, is independent of the dose rate and has an Arrhenius-type temperature dependence, with activation enthalpies between 0.19 and 0.22 eV, depending on the average composition.

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References

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