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A Comparison of the Degradation and Annealing Kinetics in Amorphous Silicon and Amorphous Silicon-Germaniumsolar Cells

Published online by Cambridge University Press:  15 February 2011

D. E. Carlson ,
L. F. Chen ,
G. Ganguly ,
G. Lin ,
A. R. Middya ,
R. S. Crandall  and
R. Reedy
D. E. Carlson
Affiliation:
Solarex, A Business Unit of BP/Amoco Solar, 3601 LaGrange Parkway, Toano, VA 23168
L. F. Chen
Affiliation:
Solarex, A Business Unit of BP/Amoco Solar, 3601 LaGrange Parkway, Toano, VA 23168
G. Ganguly
Affiliation:
Solarex, A Business Unit of BP/Amoco Solar, 3601 LaGrange Parkway, Toano, VA 23168
G. Lin
Affiliation:
Solarex, A Business Unit of BP/Amoco Solar, 3601 LaGrange Parkway, Toano, VA 23168
A. R. Middya
Affiliation:
Solarex, A Business Unit of BP/Amoco Solar, 3601 LaGrange Parkway, Toano, VA 23168
R. S. Crandall
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
R. Reedy
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401
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Abstract

The degradation and annealing kinetics of both a-Si:H and a-SiGe:H single-junction solar cells were investigated under varying conditions. In every case, the kinetics associated with degradation and annealing were slower for a-SiGe:H cells than for a-Si:H cells. Since deuterium diffusion studies indicate that the hydrogen in our a-SiGe:H films diffuses more slowly than that in the a-Si:H films, hydrogen motion may play a role in determining both the degradation and annealing kinetics of the devices.

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