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Comparison of AlN films grown by RF magnetron sputtering and ion-assisted molecular beam epitaxy

Published online by Cambridge University Press:  22 February 2011

J. Chan ,
T. Fu ,
N. W. Cheung ,
J. Ross ,
N. Newman  and
M. Rubin
J. Chan
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
T. Fu
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
N. W. Cheung
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720
J. Ross
Affiliation:
Energy and Environment Division Lawrence Berkeley Laboratory University of California, Berkeley, CA 94720
N. Newman
Affiliation:
Energy and Environment Division Lawrence Berkeley Laboratory University of California, Berkeley, CA 94720
M. Rubin
Affiliation:
Energy and Environment Division Lawrence Berkeley Laboratory University of California, Berkeley, CA 94720
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Abstract

Crystalline aluminum nitride (AIN) thin films were formed on various substrates by using RF magnetron sputtering of an Al target in a nitrogen plasma and also by ion-assisted molecular beam epitaxy (IAMBE). Basal-oriented AIN/(1 11) Si showed a degradation of crystallinity with increased substrate temperature from 550 to 770 °C, while the crystallinity of AIN/ (0001) A12O3 samples improved from 700 to 850 °C. The optical absorption characteristics of the AIN/(0001) A12O3 films as grown by both deposition methods revealed a decrease in subbandgap absorption with increased substrate temperature.

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References

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