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A Comparative Study of the Photoablation of Polyimide-Doped Poly(Tetrafluoroethylene) at 308 NM and 248 NM

Published online by Cambridge University Press:  01 January 1992

G. C. D'couto ,
S. V. Babu ,
F. D. Egitto  and
C. R. Davis
G. C. D'couto
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, NY 13699
S. V. Babu
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, NY 13699
F. D. Egitto
Affiliation:
IBMCorporation, Technology Products, Endicott, NY 13760
C. R. Davis
Affiliation:
IBMCorporation, Technology Products, Endicott, NY 13760
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Abstract

Experimental data on the 248 nm and 308 nm wavelength excimer laser ablation of poly(tetrafluoroethylene) (PTFE) doped with polyimide (PI) are reported for a range of fluences and dopant concentrations. Threshold fluences were determined and correlated with the dopant concentrations. The threshold fluences and the limiting etch rates measured at high fluences decreased with increasing dopant concentration and there is a minimum absorption coefficient below which there is no ablation at both the wavelengths. The etch rates have been modeled using a two parameter Arrhenius thermal model to describe the etching process.

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References

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