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Combined Spin Valve and Anisotropic Magnetoresistance in NiFe/Cu/NiFe Layered Thin Films

Published online by Cambridge University Press:  03 September 2012

Th.G.S.M. Rijks ,
R. Coehoorn  and
W.J.M. De Jonge
Th.G.S.M. Rijks
Affiliation:
Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands Philips Research Laboratories, P.O. Box 80000, 5600 JA Eindhoven, The Netherlands
R. Coehoorn
Affiliation:
Philips Research Laboratories, P.O. Box 80000, 5600 JA Eindhoven, The Netherlands
W.J.M. De Jonge
Affiliation:
Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

We present a theoretical study of the combined effect of spin valve and anisotropie magnetoresistance in NiFe/Cu/NiFe layered thin films, using an extended form of the semiclassical Camley and Barnás Model for electron transport. The anisotropie magnetoresistance is treated by introducing spin-dependent anisotropie mean free paths in the NiFe layers. From calculations of both magnetoresistance effects as a function of NiFe and Cu thickness, we discuss the validity of a description of the combined effect in terms of a simple summation of spin valve and anisotropie Magnetoresistance.

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References

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