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Co-Implantation and the Role of Implant Damage in the ThermalStability of Implanted Helium in Indium Phosphide

Published online by Cambridge University Press:  17 March 2011

Todd W. Simpson
Affiliation:
Department of Physics & Astronomy, University of Western Ontario, London, Ontario, N6A3K7, Canada
Ian V. Mitchell
Affiliation:
Department of Physics & Astronomy, University of Western Ontario, London, Ontario, N6A3K7, Canada
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Abstract

The thermal stability of 3He implanted into single crystal indiumphosphide has been studied. Helium diffuses in the 200°C-300°C temperaturerange unless stabilized by bubbles which trap helium up to the 400°C-500°Ctemperature range. The efficiency of bubble formation, as measured by thefraction of implanted helium retained to 400°C is increased by: 1)increasing the helium fluence, 2) increasing the temperature ramp rate, 3)co-implantation with a second ion species, or 4) implanting at elevatedtemperature. The mechanism by which these processes enhance bubble formationcan be understood in terms of a model where the nucleation of bubbles occursat elevated temperature in the presence of both lattice defects and heliumatoms.

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Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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