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Coherency Strain and High Strength at High Temperature

Published online by Cambridge University Press:  10 February 2011

M. E. Brenchley ,
D. J. Dunstan ,
P. Kidd  and
A. Kelly
M. E. Brenchley
Affiliation:
Department of Physics, University of Surrey, Guildford, Surrey GU2 5XH, England, M.Brenchley@surrey.ac.uk
D. J. Dunstan
Affiliation:
Department of Physics, Queen Mary and Westfield College, London El 4NS, England
P. Kidd
Affiliation:
Department of Materials Science and Engineering, University of Surrey, Guildford, Surrey GU2 5XH, England
A. Kelly
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, England
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Abstract

We propose an athermal strengthening mechanism for high-temperature structural materials in which large coherency strains are built in to a layered structure in order to prevent dislocation mulitplication mechanism from functioning. A practical model system is provided by semiconductor strained-layer superlattices of InGaAs grown on InP. We report results from highresolution X-ray diffraction and from direct tensile testing which provide evidence for athermal strengthening. A discussion of methods of micro-mechanical testing is also included.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 434: Symposium U – Layered Materials for Structural Applications , 1996 , 147
Copyright
Copyright © Materials Research Society 1996

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