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Chemical Vapor Deposition of Cobalt Silicide

Published online by Cambridge University Press:  25 February 2011

Gary A. West  and
Karl W. Beeson
Gary A. West
Affiliation:
Allied-Signal, Inc., P. 0. Box 1021R, Morristown, NJ 07960
Karl W. Beeson
Affiliation:
Allied-Signal, Inc., P. 0. Box 1021R, Morristown, NJ 07960
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Abstract

Cobalt silicide films have been deposited by chemical vapor deposition using Co2 (CO)8 or HCo(CO)4 as the Co source and SiH4 or Si2 H6 as the Si source. The Co:Si ratio of the films increases with the deposition temperature, and CoSi2 stoichiometry is obtained at 300° C using SiH4 or at 225° C when Si2 H6 is the Si precursor. Resistivities of films deposited in the range CoSi2.0 to CoSi3.0. are typically 200 microohm-cm and drop to 30 – 40 microohm-cm upon annealing at 900° C.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 131: Symposium E – Chemical Perspectives of Microelectronic Materials I , 1988 , 389
Copyright
Copyright © Materials Research Society 1989

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References

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