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Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Published online by Cambridge University Press:  01 February 2011

Yi Chen ,
Govindhan Dhanaraj ,
Hui Chen ,
William Vetter ,
Michael Dudley  and
Hui Zhang
Yi Chen
Affiliation:
yichen1@ic.sunysb.edu, Stony Brook University, Materials Science and Engineering, 314 Old Engineering, SUNY-Stony Brook, Stony Brook, NY 11794-2275, Stony Brook, NY, 11794-2275, United States, 631-632-4993, 631-632-8052
Govindhan Dhanaraj
Affiliation:
gdhanaraj@ms.cc.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, United States
Hui Chen
Affiliation:
huichen@ic.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, United States
William Vetter
Affiliation:
wvetter@ms.cc.sunysb.edu, Stony Brook University, Department of Materials Science and Engineering, United States
Michael Dudley
Affiliation:
Stony Brook University, Department of Materials Science and Engineering, United States
Hui Zhang
Affiliation:
huzhang@ms.cc.sunysb.edu, Stony Brook University, Department of Mechanical Engineering, United States
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Abstract

SiC homo-epitaxial layers have been grown using a halide chemical vapor deposition (HCVD) process. The thermodynamic process of SiC CVD in SiCl4-C3H8-H2 gas system was studied using equilibrium model. The predicted growth rate decreases gradually with the increase in growth temperature, and this trend is consistent with our experimental results. Good quality epitaxial layers with low density of basal plane dislocations could be grown. Some elementary screw dislocations present in the substrate do not seem to be propagating into the epitaxial layer.

Keywords

chemical vapor deposition (CVD) (deposition)crystal growthdefects

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References

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