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Chemical Vapor Deposited Boron Carbide: Growth by a Vapor-Liquidsolid Process

Published online by Cambridge University Press:  25 February 2011

Ian D. R. Mackinnon  and
Katherine L. Smith
Ian D. R. Mackinnon
Affiliation:
Department of Geology, University of New Mexico, Albuquerque, NM 87131.
Katherine L. Smith
Affiliation:
On leave from Department of Physics, New South Wales Institute of Technology, P.O. Box 123, Broadway, Sydney, NSW 2007, Australia.
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Abstract

Detailed analytical electron microscope (AEM) studies of yellow whiskers produced by chemical vapor deposition (CVD)1 show that two basic types of whiskers are produced at low temperatures (between 1200°C and 1400°C) and low boron to carbon gas ratios. Both whisker types show planar microstructures such as twin planes and stacking faults oriented parallel to, or at a rhombohedral angle to, the growth direction. For both whisker types, the presence of droplet-like terminations containing both Si and Ni indicate that the growth process during CVD is via a vapor-liquid-solid (VLS) mechanism.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 127
Copyright
Copyright © Materials Research Society 1987

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References

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