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Chemical Effects in Ion Implantation Induced Quantum WellIntermixing

Published online by Cambridge University Press:  17 March 2011

Todd W. Simpson ,
Paul G. Piva  and
Ian V. Mitchell
Todd W. Simpson
Affiliation:
University of Western Ontario, Department of Physics & Astronomy, London, ON, N6A 3K7, CANADA
Paul G. Piva
Affiliation:
University of Western Ontario, Department of Physics & Astronomy, London, ON, N6A 3K7, CANADA
Ian V. Mitchell
Affiliation:
University of Western Ontario, Department of Physics & Astronomy, London, ON, N6A 3K7, CANADA
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Abstract

Ion implantation followed by rapid thermal annealing is used to induce layerintermixing and thus selectively blue-shift the emission wavelength ofInP-based quantum well hetero- structures. The intermixing is greatlyenhanced over thermal intermixing due to the supersaturation of defects. Themagnitude of the observed blue-shift has been studied previously as afunction of ion fluence and ion mass: the dependence on ion mass is wellestablished, with heavier ions producing a larger shift. We show here thatchemical effects can also play a significant role in determining the inducedblue-shift. Data are presented from the implantation of the similar massions; aluminum (m~27), silicon (m~28) and phosphorus (m~31). The P- inducedblue shift displays a monotonic increase with fluence, consistent withprevious studies; however, the fluence dependence of Al- and Si-inducedblue-shifts both deviate significantly from the behaviour for P. Theseresults have important implications for attempts to scale intermixingbehaviour with ion mass.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O5.16
Copyright
Copyright © Materials Research Society 2001

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References

1.For a recent overview of quantum well intermixing, see “Quantum Well Intermixing for Photonics,” Edited by Li, E. Herbert, Proc. SPIE, MS–145, (1998).Google Scholar
2.Tan, H.H., Williams, J.S., Jagadish, C., Burke, P.T. and Gal, M., Mat. Res. Soc. Symp. Proc. 396, 823 (1996).Google Scholar
3.Haysom, J. E., Aers, G. C., Raymond, S., and Poole, P. J., J. Appl. Phys. 88, 3090 (2000).Google Scholar
4.Biersack, J. P. and Haggmark, L. G., Nucl. Instrum. Meth. 174, 257 (1980).Google Scholar
5.Gasparotto, A., Carnera, A., Frigeri, C., Priolo, F., Fraboni, B., Camporese, A. and Rossetto, G., J. Appl. Phys. 85, 753 (1999).Google Scholar
6.Simpson, T.W., Piva, P.G. and Mitchell, I.V., unpublished.Google Scholar
7.Simpson, T.W. and Mitchell, I.V., Appl. Phys. Lett., 78, 207 (2001)Google Scholar