Hostname: page-component-54dcc4c588-m259h Total loading time: 0 Render date: 2025-10-11T01:44:01.333Z Has data issue: false hasContentIssue false
  • English
  • Français

Charge-Sensitive Poly-Silicon TFT Amplifiers for a-Si:H Pixel Particle Detectors

Published online by Cambridge University Press:  21 February 2011

G. Cho ,
V. Perez-Mendez ,
M. Hack  and
A. Lewis
G. Cho
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
V. Perez-Mendez
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA 94720
M. Hack
Affiliation:
Xerox Pare, Palo Alto, CA 94304
A. Lewis
Affiliation:
Xerox Pare, Palo Alto, CA 94304
Get access

Abstract

Prototype charge-sensitive poly-Si TFT amplifiers have been made for the amplification of signals (from an a-Si:H pixel diode used as an ionizing particle detector). They consist of a charge-sensitive gain stage, a voltage gain stage and a source follower output stage. The gain-bandwidth product of the amplifier is ∼ 300 MHz. When the amplifier is connected to a pixel detector of 0.2 pF, it gives a charge-to-voltage gain of ∼ 0.02 mV/electrons with a pulse rise time less than 100 nsec. An equivalent noise charge of the front-end TFT is ∼ 1000 electrons for a shaping time of 1 μsec.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1181
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Perez-Mendez, V., Cho, G., Fujieda, I., Kaplan, S.N., Qureshi, S. and Street, R.A. in Amorphous Silicon Technology, edited by Madan, A., Thompson, M.J., Taylor, P.C., Hamakawa, Y., LeComber, P.G. (Mater. Res. Soc. Proc. 142, Pittsburgh, PA 1989) pp. 621–630.Google Scholar
[2] Perez-Mendez, V., Cho, G., Drewery, J., Jing, T., Kaplan, S.N., Qureshi, S., Wildermuth, D. and Street, R.A., J. Non-Crystalline Solids, 137&138, 1291 (1992).Google Scholar
[3] Shiraki, Y. and Maruyama, E., Amorphous Semiconductor Technologies and Devices, Vol. 6, 266 (1983).Google Scholar
[4] Moruzumi, S., Kurihara, H., Takeshita, T., Ota, H. and Hasegawa, K., IEEE Trans. Electron Dev., ED-32, 1545 (1985).Google Scholar
[5] Lewis, A.G., Wu, I-Wei, Huang, T.Y., Chiang, A. and Bruce, R.H., IEDM- 1990, 843 (1990).Google Scholar
[6] Gregorian, R. and Temes, G.C., Analog MOS Integrated Circuits for Signal Processing, (John Wiley, New York, 1986) pp. 128–129.Google Scholar
[7] User's Manual of PSPICE, MicroSim. Corp., Laguna Hills, 1987.Google Scholar
[8] Lewis, A.G., Huang, T.Y., Bruce, R.H., Koyanagi, M., Chiang, A. and Wu, I-Wei, IEDM-1988, 264 (1988).Google Scholar
[9] Hung, K.K., Ko, P.K., Hu, C. and Cheng, Y.C., IEDM-1988, 34 (1988).Google Scholar
[10] Gray, P.R. and Meyer, R.G., Analysis and Design of Analog Integrated Circuit, 2nd Ed., (John Wiley and Sons, New York, 1982) p. 666.Google Scholar
[11] Goulding, F.S. and Landis, D., IEEE Trans. Nuc. Sci., NS-29, 1125 (1982).Google Scholar
[12] Nicholson, P. W., Nuclear Electronics, (John Wiley and Sons, New York, 1074) p. 45.Google Scholar
[13] Byun, Y.H., Shur, M., Hack, M. and Lee, K., First Int. Semicond. Dev. Res. Symp. Proc., pp. 537–540 (1991).Google Scholar