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Charge Transfer and Surface Reaction in Silicon Vapor Phase Epitaxial Growth

Published online by Cambridge University Press:  25 February 2011

A. Ishitani ,
T. Takada ,
Y. Ohshita  and
K. Tanigaki
A. Ishitani
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 1–1 Miyazaki 4-chome, Miyamae-ku, Kawasaki, 213 Japan
T. Takada
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 1–1 Miyazaki 4-chome, Miyamae-ku, Kawasaki, 213 Japan
Y. Ohshita
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 1–1 Miyazaki 4-chome, Miyamae-ku, Kawasaki, 213 Japan
K. Tanigaki
Affiliation:
Fundamental Research Laboratories, NEC Corporation, 1–1 Miyazaki 4-chome, Miyamae-ku, Kawasaki, 213 Japan
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Abstract

Silicon vapor phase epitaxial growth with SiH2Cl2 is theoretically studied. The optimized geometries and total energigs of the species, generated from SiH2Cl2, are calculated by using ab initio molecular orbital method. As the intgraction between silicon surface and SiCl2 the charge transfer is considered. Based on the computational result that SiCl2 - has the lower total energy than SiCl2, a new adsorption mechanism, named, charge transfer adsorption, is p~oposed. By using this charge transfer adsorption followed by the surface reaction at the hollow bridge site, the epitaxial growths on the silicon (001), (111), and (110) surfaces are discussed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 94: Symposium D – Initial Stages of Epitaxial Growth , 1987 , 261
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

(1) Lever, R.F., IBM J.Res.Develop. 8,460(1964)Google Scholar
(2) Sirtl, E., Hunt, L.P., and Sawyer, D.H., J.Electrochem.Soc. 121,919(1974)Google Scholar
(3) Ban, V.S. and Gilbert, S.L., J.Electrochem.Soc. 122,1382(1975)Google Scholar
(4) van der Putte, P., J. Crystal Growth, 41,133(1977)Google Scholar
(5)J.Nishizawa And Nihira, H., J. Crystal Growth, 45,82(1978)Google Scholar
(6) Sedgwick, T.O., Smith, J.E. Jr., Ghez, R., and Cowher, M.E., J.Crystal Growth 31,264(1975)CrossRefGoogle Scholar
(7) Ban, V.S. and Gilbert, S.L., J. Crystal Growth, 31,284(1975)Google Scholar
(8) Chernov, A.A., J. Crystal Growth, 42,55(1977)Google Scholar
(9) Claassen, W.A.P. and Bloem, J., J. Crystal Growth, 50,807(1980)Google Scholar
(10) Srinivasan, G.R., J. Crystal Growth, 70,230(1984)Google Scholar
(ll) Cullen, G.W., J. Crystal Growth, 70,201(1984)CrossRefGoogle Scholar
(12) Nishizawa, J., J.Japan Assoc.Crystal Growth, 5,17(1978)Google Scholar
(13) Kashiwagi, H., Takada, T., Obara, S., Miyoshi, E., and Ohno, K., International Journal of Quantum Chemistry, 14,13(1978)Google Scholar
(14) Huzinaga, S., J.Chem.Phys. 42,1293(1965)Google Scholar
(15) Huzinaga, S., Andzelm, J., Klobkowski, M., Radzio-Andzelm, E., Sakai, Y., and Terasaki, H., Physical Science Data 16 (Elsevier Science Publishers, New York, 1984)Google Scholar
(16) Dupuis, M., Spangler, D., and Wendoloski, J.J., NRCC Software Catalog: QGOI”GAMESS”Google Scholar
(17) Mulliken, R.S., J.Chem.Phys. 23,1841(1955)Google Scholar
(18) JANAF Thermodynamical Tables edited by Stull, D.R. (National Bureau of Standards, Washington, 1971) 2nd ed.Google Scholar
(19) Bell, T.N., Perkins, K.A., and Perkins, P.G., J.Chem.Soc.,Faraday Trans. I 77,1779(1981)CrossRefGoogle Scholar
(20) Gosavi, R.K. and Strausz, O.P., Chem.Phys.Lett. 123,65(1986)CrossRefGoogle Scholar
(21) Motook, T. and Greene, J.E., J.Appl.Phys. 59,2015(1986)Google Scholar