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Characterization of Thin Layers of Metal Clusters Embedded inSilica Glass Formed by High Dose Ion Implantation

Published online by Cambridge University Press:  17 March 2011

P.S. Chung ,
S.P. Wong ,
W.Y. Cheung ,
N. Ke ,
W.K. Lee  and
C.W. Chan
P.S. Chung
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
S.P. Wong
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
W.Y. Cheung
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
N. Ke
Affiliation:
Department of Electronic Engineering and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
W.K. Lee
Affiliation:
Department of Physics and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
C.W. Chan
Affiliation:
Department of Physics and Materials Science and Technology Research Centre, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong, China
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Abstract

Thin layers of metal clusters in silica glass were formed by high dose ionimplantation of Ag, Ni and Cu using a metal vapor vacuum arc (MEVVA) ionsource. Characterization of the implanted layers was performed usingRutherford backscattering spectroscopy, transmission electron microscopy,x-ray diffraction, and optical measurements. The nonlinear opticalproperties of the implanted samples were studied by the z-scan method, usinga self mode-locked Ti: sapphire laser delivering linearly polarized pulsesof 130fs long at a wavelength of 790nm at 76MHz. The variation of theintensity-dependent refractive index n 2 with the ion species and the implantation conditions were studied.An n 2 value of about 0.6 cm2/GW was measured for one of theCu and Ni co-implanted samples. The correlation between n 2 and the cluster size was also analyzed. Ellipsometry spectra ofthe samples were measured in the visible range from 0.4 to 0.7[.proportional]m and in the near infrared range from 0.9 to 1.6[.proportional]m. Preliminary results are reported on our attempt to deducethe effective complex refractive indices of the implanted layers by fittingof the ellipsometry spectra using a simple single uniform layer on substratemodel and the Maxwell-Garnett effective medium approximation.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O5.11
Copyright
Copyright © Materials Research Society 2001

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References

1. Falconieri, M., Salvetti, G., Cattaruzza, E., Gonella, F., Mattei, G., Mazzoldi, P., Piovesan, M., Battaglin, G., Polloni, R., Appl. Phys. Lett. 73, 287 (1998).Google Scholar
2. Azzam, R.M.A. and Bashara, N.M., Ellipsometry and Polarized Light, (North-Holland, Amsterdam, 1977).Google Scholar
3. Doolittle, L.R., Nucl. Instr. and Meth. B 15, 227 (1986).Google Scholar
4. Sheik-Bahae, M., Said, A.A., Wei, T.-H., Hagan, D.J., Stryland, E.W. Van, IEEE J. Quantum Electron. 26, 760 (1990).Google Scholar
5. Sheik-Bahae, M., Said, A.A. and Stryland, E.W. Van, Opt. Lett. 14, 955 (1989).Google Scholar
6. Jellison, G.E., Thin Solid Films 234, 416 (1993).Google Scholar
7. Mendoza-Galvan, A., Perez-Robles, JF, Espinoza-Beltran, FJ, Ramirez-Bon, R., Vorobiev, YV, Gonzalez-Hernandez, J., Martinez, G., J. Vac. Sci. Technol. A 17, 1103 (1999).Google Scholar