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Characterization of Dislocations in GaAs Grown on Si and Ge

Published online by Cambridge University Press:  28 February 2011

N.-H. Cho ,
S. Mckernan ,
C. B. Carter ,
B. C. De Cooman  and
K. Wagner
N.-H. Cho
Affiliation:
Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, N.Y. 14853
S. Mckernan
Affiliation:
Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, N.Y. 14853
C. B. Carter
Affiliation:
Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, N.Y. 14853
B. C. De Cooman
Affiliation:
Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, N.Y. 14853
K. Wagner
Affiliation:
McDonnell Douglas Astronautics Co., OEC, 350 Executive Boulevard, Elmsford, N.Y. 10523
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Abstract

Dislocations are produced at the interface between epilayers and the substrate when there is a lattice mismatch. When GaAs is grown on Ge substrates, these dislocations can propagate into the epilayers. They can then interact with one another or with antiphase boundaries which are generated when the polar-material is grown on a non-polar materials.The interactions between these defects have been investigated using the weak-beam imaging technique of transmission electron microscopy. Possible interactions between the misfit dislocations and heterojunctions were examined in a specially prepared layer structure model of GaAs-AlxGal−xAs.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 91: Symposium A – Heteroepitaxy on Silicon II , 1987 , 161
Copyright
Copyright © Materials Research Society 1987

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