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The Characterization of Alloyed NiGeAuAgAu Ohmic Contacts to AlInAs/GaInAs Heterostructure by Auger Electron Spectroscopy and Wavelength Dispersive X-Ray Analysis

Published online by Cambridge University Press:  22 February 2011

P. M. Capani ,
S. D. Mukerjee ,
L. Rathbun ,
H. T. Griem ,
G. W. Wicks ,
L. F. Eastman  and
J. Hunt
P. M. Capani
Affiliation:
1IBM Corporation, 1701 North Street, Endicott, NY 13760
S. D. Mukerjee
Affiliation:
School of Electrical Enginneering and National Research and Resource Facility for Submicron Structures, Cornell University, Phillips Hall, Ithaca, NY 14853
L. Rathbun
Affiliation:
School of Electrical Enginneering and National Research and Resource Facility for Submicron Structures, Cornell University, Phillips Hall, Ithaca, NY 14853
H. T. Griem
Affiliation:
Highes Research Laboratories, Malibu, CA 90265
G. W. Wicks
Affiliation:
School of Electrical Enginneering and National Research and Resource Facility for Submicron Structures, Cornell University, Phillips Hall, Ithaca, NY 14853
L. F. Eastman
Affiliation:
School of Electrical Enginneering and National Research and Resource Facility for Submicron Structures, Cornell University, Phillips Hall, Ithaca, NY 14853
J. Hunt
Affiliation:
School of Materials Science, Bard Hall, Cornell University, Ithaca, NY 14853
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Abstract

In a lattice-matched <100> InP/Ga0.47In0.53As/Al0.48In0.52As system used for modulation-doped field effect transistors (MODFETs), low resistance ohmic contacts to the two-dimensional electron gas have been fabricated using alloyed NiGeAuAgAu metallization. In this work we examine the use of Auger electron spectroscopy (AES) and wavelength dispersive x-ray spectroscopy (WDX) analyses for studying the metal-semiconductor interactions and their correlation with measured ohmic contact resistance.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 48: Symposium E – Applied Materials Characterization , 1985 , 203
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1. Capani, P.M., Mukherjee, S.D., Zwicknagl., P., Berry, J.D., Griem, H.T., Rathbun, L. and Eastman, L.F., “Low Resistance Alloyed Ohmic Contacts to A10.48In0.52As/n+-Gao.47Ino.53As”, Electron. Lett. 20, 11, 446–447 (1984).CrossRefGoogle Scholar
2. Reeves, G.K. and Harrison, H.B., ”Obtaining the Specific Contact Resistance from Transmission Line Model Measurements”, IEEE Electron Dev. Lett. EDL–3, 111–113 (1982).CrossRefGoogle Scholar
3. Capani, P.M., Mukherjee, S.D., Zwicknagl, P., Berry, J.D., Griem, H.T., Wicks, G.W., Rathbun, L. and Eastman, L.F., “A Study of Alloyed AuGeNi/Ag/Au Based Ohmic Contacts on the Al0.48In0.52As/Ga0.47In0.53As System”, paper presented at Electronics Materials Conference, Santa Barbara, CA, June 1984, to be published in J. Electron. Maters.Google Scholar