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Channeling Effect in Boron and Boron MolecularIon-Implantation

Published online by Cambridge University Press:  25 February 2011

N. Delfino  and
B.M. Paine
N. Delfino
Affiliation:
Philips Research Laboratories Sunnyvale, Signetics Corporation, Sunnyvale, CA 94088
B.M. Paine
Affiliation:
California Institute of Technology, Pasadena, CA 91125
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Abstract

The extent of boron channeled into interstitial and substitutional sites ismeasured for singly charged ions of B, BF, BCl, and BF2 implantedinto <100> silicon. We find that the most deeply penetrating boronatoms ome to rest in interstiitial sites with the consequence thatelectrical junctions are always more shallow than etallurgical junctions.This result is essentially independent of ion mass, energy, and fluence.

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References

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