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Changes in Short- and Medium-Range Order in a-Si:H Induced by Light-Soaking, Pseudodoping and Doping With Boron

Published online by Cambridge University Press:  10 February 2011

O.A. Golikova ,
M.M. Kazanin ,
V.Kh. Kudoyarova ,
G.J. Adriaenssens  and
A. Eliat
O.A. Golikova
Affiliation:
A.F.Ioffe Physico-Technical Institute, 194021, St.Petersburg, Russia
M.M. Kazanin
Affiliation:
A.F.Ioffe Physico-Technical Institute, 194021, St.Petersburg, Russia
V.Kh. Kudoyarova
Affiliation:
A.F.Ioffe Physico-Technical Institute, 194021, St.Petersburg, Russia
G.J. Adriaenssens
Affiliation:
K.U.Leuven, Laboratorium voor Halfgeleiderfysica, B- 3001, Heverlee, Belgium
A. Eliat
Affiliation:
K.U.Leuven, Laboratorium voor Halfgeleiderfysica, B- 3001, Heverlee, Belgium
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Abstract

A study of a-Si:H structure on the scales of short- and medium- range order has been carried out by the Raman spectroscopy method. Undoped a-Si:H films were deposited by the conventional rf- PECVD with some special variations in the process conditions ( pseudodoping technique); doping with boron was performed from a gas phase as well as by ion implantation. Changes in short- and medium- range order induced by light-soaking, pseudodoping and doping with boron were determined and compared.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 619
Copyright
Copyright © Materials Research Society 1998

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References

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