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Carrier Compensation Mechanism of Highly Conductive Anatase Ti0.94Nb0.06O2 Epitaxial Thin Films

Published online by Cambridge University Press:  01 February 2011

Hiroyuki Nogawa ,
Taro Hitosugi ,
Hideyuki Kamisaka ,
Kouichi Yamashita ,
Akira Chikamatsu ,
Kouhei Yoshimatsu ,
Hiroshi Kumigashira ,
Masaharu Oshima ,
Syoichiro Nadao  and
Yutaka Furubayashi
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Hiroyuki Nogawa
Affiliation:
daen@chem.s.u-tokyo.ac.jp, University of Tokyo, Department of Chemistry, 7-3-1, Hoingou, Bunkyouku, Tokyo, 113-0033, Japan, 03-5841-4603
Taro Hitosugi
Affiliation:
hitosugi@chem.s.u-tokyo.ac.jp, University of Tokyo, Department of Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Hideyuki Kamisaka
Affiliation:
kami@tcl.t.u-tokyo.ac.jp, University of Tokyo, Department of Chemical System Engineering, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Kouichi Yamashita
Affiliation:
yamasita@tcl.t.u-tokyo.ac.jp, University of Tokyo, Department of Chemical System Engineering, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Akira Chikamatsu
Affiliation:
chikamatsu@sr.t.u-tokyo.ac.jp, University of Tokyo, Department of Applied Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Kouhei Yoshimatsu
Affiliation:
yoshimatsu@sr.t.u-tokyo.ac.jp, University of Tokyo, Department of Applied Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Hiroshi Kumigashira
Affiliation:
Kumigashira@sr.t.u-tokyo.ac.jp, University of Tokyo, Department of Applied Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Masaharu Oshima
Affiliation:
oshima@sr.t.u-tokyo.ac.jp, University of Tokyo, Department of Applied Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Syoichiro Nadao
Affiliation:
nakao@ksp.or.jp, Kanagawa Academy of Science and Technology, 3-2-1, Sakado, Takatsuku, Kawasaki, 213-0012, Japan
Yutaka Furubayashi
Affiliation:
Furubayashi@ksp.or.jp, Kanagawa Academy of Science and Technology, 3-2-1, Sakado, Takatsuku, Kawasaki, 213-0012, Japan
Yasushi Hirose
Affiliation:
Hirose@chem.s.u-tokyo.ac.jp, University of Tokyo, Department of Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Toshihiro Shimada
Affiliation:
Shiamada@chem.s.u-tokyo.ac.jp, University of Tokyo, Department of Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
Tetsuya Hasegawa
Affiliation:
hasegawa@chem.s.u-tokyo.ac.jp, University of Tokyo, Department of Chemistry, 7-3-1, Hongo, Bunkyoku, Tokyo, 113-0033, Japan
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Abstract

We investigated electrical conduction of anatase Ti0.94Nb0.06O2 (TNO) epitaxial thin films in relation to oxygen defects generated by post-annealing. Annealing of TNO in oxygen was found to cause dramatic decreases in ne . Resonant photoemission spectroscopy measurements revealed that a deep acceptor state just above the top of valence band evolves, synchronized with the decrease of ne . We proposed that the acceptor state originates from interstitial oxygen atoms combined with Nb dopants and compensates electron carriers.

Keywords

thin filmtransparent conductorx-ray photoelectron spectroscopy (XPS)

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1074: Symposium I – Synthesis and Metrology of Nanoscale Oxides and Thin Films , 2008 , 1074-I05-08
Copyright
Copyright © Materials Research Society 2008

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References

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