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Capacitance Spectroscopy of Schottky Diodes Formed on Ion-Etched GaAs

Published online by Cambridge University Press:  26 February 2011

S. Sen ,
E. D. Cole  and
L. C. Burton
S. Sen
Affiliation:
College of Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
E. D. Cole
Affiliation:
College of Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
L. C. Burton
Affiliation:
College of Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA 24061
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Abstract

DLTS and low frequency capacitance measurements were made on Schottky diodes formed on Ion-beam etched (IBE) GaAs surfaces. Ion bombardment causes strong low frequency capacitance dispersion, increasing with ion energy. This is attributed to a thin, heavily damaged region, with a trap density in excess of 1017 per cm3. Such dispersion disappears under weak reverse bias and at reduced temperatures. These and other measurements are consistent with a lumped R-C model having components representing the top damaged layer, the underlying space-charge region, and shunt resistance to the ohmic contact.

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References

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