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Bulk Crystal Growth of Hg1−xCdxTe for Avalanche Photodiode Applications*

Published online by Cambridge University Press:  25 February 2011

T. Nguyen Duy ,
A. Durand  and
J. L. Lyot
T. Nguyen Duy
Affiliation:
Société Anonyme de Télécommunications, 41 Rue Cantagrel 75631 PARIS CEDEX 13
A. Durand
Affiliation:
Société Anonyme de Télécommunications, 41 Rue Cantagrel 75631 PARIS CEDEX 13
J. L. Lyot
Affiliation:
Société Anonyme de Télécommunications, 41 Rue Cantagrel 75631 PARIS CEDEX 13
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Abstract

High gap Hg1−xCdxTe (MCT) crystal is grown by a solvent method using a travelling heater zone. The use of the solvent zone permits a low temperature and low mercury pressure growth of MCT in a large composition range. In the Cadmium rich alloy range the MCT material exhibits a large spin orbit coupling leading to a resonance at Eg = ΔO. Due to this particular resonance effect the ionization coefficient of hole is higher than that of the electron, resulting in a low exess noise factor in the avalanche photodiodes whose bandgap energy is close to the spin orbit splitting ΔO.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 90: Symposium R – Materials for Infrared Detectors and Sources , 1986 , 81
Copyright
Copyright © Materials Research Society 1987

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Footnotes

*

Work partly supported by the DAII

References

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