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Atomic Oxidation of Ultra Thin SiGe Using Afterglow Oxygen Plasma

Published online by Cambridge University Press:  25 February 2011

P. C. Chen ,
J. Y. Lin ,
Y. J. Hsut  and
H. L. Hwang
P. C. Chen
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsin-chu, Taiwan, R.O.C.
J. Y. Lin
Affiliation:
Department of Electrical Engineering, Chung Cheng Institute of Technology, Ta—shi, Tao—yuan, Taiwan, R.O.C.
Y. J. Hsut
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsin-chu, Taiwan, R.O.C.
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Abstract

Microwave remote plasma oxidation system was used to study the oxidation of SiGe samples at low temperatures. The extent of Ge segregation at oxide/SiGe interface was investigated by using SIMS depth profiles. By comparing the segregation factors, the Ge segregation in the samples oxidized by atomic oxygen at 500 °C was much less than that in the samples oxidized without plasma at 950 °C. The Ge segregation has been largely suppressed by atomic oxygen oxidation at lower temperature.

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References

REFERENCES

1 Vandebroek, S. V., Crabbe, E. F., Meyerson, B. S., Harame, D. L., Restle, P. J., Stork, J. M. C., Megdanis, A. C., Stanis, C. L., Bright, A. A., Kroesen, G. M. W. and Warren, A. C., IEEE Electron Dev. Lett. 12(8), 447 (1991).Google Scholar
2 Garone, P. M., Venkataraman, V. and Sturm, J. C., IEDM Tech. Dig., 383 (1990).Google Scholar
3 Kamins, T. I., Wang, K. L., Park, J., Davis, G. E., J. Appl. Phys. 65(4), 1505 (1989).Google Scholar
4 Meyerson, B. S., Appl. Phys. Lett. 48(12), 797 (1986).Google Scholar
5 Selvakumar, C. R. and Hecht, B., IEEE Electron Dev. Lett. 12(8), 444 (1991).Google Scholar
6 LeGoues, F. K., Rosenberg, R. and Meyerson, B. S., Appl. Phys. Lett. 54(7), 644 (1989).Google Scholar
7 Srivatsa, A. R., Sharan, S., Holland, O. W. and Narayan, J., J. Appl. Phys. 65(10), 4028 (1989).Google Scholar
8 LeGoues, F. K., Rosenberg, R., Nguyen, T., Himpsel, F. and Meyerson, B. S., J. Appl. Phys. 65(4), 1724 (1989).Google Scholar
9 Frey, E. C., Parkikh, N. R., Swanson, M. L., Numan, M. Z. and Chu, W. K., Mat. Res. Soc. Symp. Proc. 105, 277 (1988).Google Scholar
10 Ruzyllo, J., Hoff, A. and Ruggles, G., J. Electronic Mat. 16(5), 373 (1987).Google Scholar
11 Yasuda, Y., Zaima, S., Kaida, T. and Koide, Y., Appl. Surf. Sci. 41/42, 429 (1989).Google Scholar
12 Tsuji, M., Sakumoto, M. and Fujii, Y., Chem. Lett., 881 (1990).Google Scholar
13 Iyer, S. S., Soloman, P. M., Kesan, V. P., Bright, A. A., Freeouf, J. L., Nguyen, T. N. and Warren, A. C., IBM Research Report (1990).Google Scholar