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Atmospheric Pressure OMCVD Growth of GaAs Using Triethylarsenic and Alkylgallium Organometallic Precursors

Published online by Cambridge University Press:  26 February 2011

Donna M. Speckman  and
Jerry P. Wendt
Donna M. Speckman
Affiliation:
The Aerospace Corporation, Electronics Research Laboratory, P.O. Box 92957, Los Angeles, CA 90009
Jerry P. Wendt
Affiliation:
The Aerospace Corporation, Electronics Research Laboratory, P.O. Box 92957, Los Angeles, CA 90009
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Abstract

Triethylarsenic was successfully used as a substitute for arsine in the atmospheric pressure OMCVD growth of GaAs epilayers. N-type GaAs films were produced at V/III ratios of 14–45 and growth temperatures of 560–590°C. The highest quality epilayers obtained were grown at temperatures of 560–570°C and V/Ill ratios of 23–27, with the best films exhibiting net carrier concentrations and 77K mobilities of ∼1015 cm−3 and ∼14,000cm2/V-s, respectively. All of the films grown using Et3As were found to be contaminated with carbon, which appears to result from an inherent decomposition mechanism of the Et3As reagent.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 187
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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