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Application of Plasma Anodization Technique to Device Fabrication

Published online by Cambridge University Press:  21 February 2011

Takuo Sugano
Takuo Sugano*
Affiliation:
University of Tokyo, Dept. of Electronic Engineering, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Abstract

Applications of plasma anodization technique to Si, GaAs and InP dev-ices fabrication, demonstrated by the author's group, are reviewed. The feature of the technique is an electric field enhanced low temperature oxidation process. Suppression of the generation of oxidation induced stacking faults, the redistribution of impurities in the substrates and the bird's beak formation in selective oxidation process is an advantage in silicon technology. It must be stressed that plasma anodization is only one technique which has been proved to be successful in growing native oxide films on InP substrates for MISFETs fabrication.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 487
Copyright
Copyright © Materials Research Society 1985

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References

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